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Our paper selected as most influential in Electronic Materials in 2018 | Lanza Group
Our paper selected as most influential in Electronic Materials in 2018 | Lanza Group

Tailoring electron beams with high-frequency self-assembled magnetic charged particle micro optics | Nature Communications
Tailoring electron beams with high-frequency self-assembled magnetic charged particle micro optics | Nature Communications

ACS Applied Electronic Materials :
ACS Applied Electronic Materials :

Paper on Printed Tattoo Organic Photodiode in ACS Applied Electronic Materials + Journal Front Cover – LAMPSe | Greco Group Graz
Paper on Printed Tattoo Organic Photodiode in ACS Applied Electronic Materials + Journal Front Cover – LAMPSe | Greco Group Graz

1. INTRODUCTION
1. INTRODUCTION

Advanced Electronic Materials: Vol 5, No 6
Advanced Electronic Materials: Vol 5, No 6

PA18 Compositional characterization of GalnSb grown by LEC method
PA18 Compositional characterization of GalnSb grown by LEC method

RESEARCH – Composites Manufacturing Laboratory
RESEARCH – Composites Manufacturing Laboratory

Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates - ScienceDirect
Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates - ScienceDirect

Journal of Electronic Materials - Wikipedia
Journal of Electronic Materials - Wikipedia

Luminescence Spectroscopy of Semiconductor Surfaces and Interfaces
Luminescence Spectroscopy of Semiconductor Surfaces and Interfaces

Electronic-structure methods for materials design | Nature Materials
Electronic-structure methods for materials design | Nature Materials

Publications – Piotr Pander, PhD
Publications – Piotr Pander, PhD

HIROSE lab._Research
HIROSE lab._Research

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) <간행물 < KISS
전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) <간행물 < KISS

Auger Electron Angular Distributions from Surfaces: Forward Focusing or Silhouettes? | Science
Auger Electron Angular Distributions from Surfaces: Forward Focusing or Silhouettes? | Science

Electronic Materials | An Open Access Journal from MDPI
Electronic Materials | An Open Access Journal from MDPI

Graham Group Publications
Graham Group Publications

Light Beam Induced Current and Electron Beam Induced Current measurements of Mercury Cadmium Telluride n-on-p photodetectors
Light Beam Induced Current and Electron Beam Induced Current measurements of Mercury Cadmium Telluride n-on-p photodetectors

ACS Applied Electronic Materials
ACS Applied Electronic Materials

Advanced Electronic Materials - Wiley Online Library
Advanced Electronic Materials - Wiley Online Library

Publications - LauhonGroup
Publications - LauhonGroup

Thermoelectric semiconductor core fibre. Array of PbTe core fibres... | Download Scientific Diagram
Thermoelectric semiconductor core fibre. Array of PbTe core fibres... | Download Scientific Diagram

Correlation of Etch Pits and Dislocations in As-grown and Thermal-Cycle-Annealed HgCdTe(211) Films | Microscopy and Microanalysis | Cambridge Core
Correlation of Etch Pits and Dislocations in As-grown and Thermal-Cycle-Annealed HgCdTe(211) Films | Microscopy and Microanalysis | Cambridge Core

Journal of Electronic Materials期刊最新论文, 化学/材料, - X-MOL
Journal of Electronic Materials期刊最新论文, 化学/材料, - X-MOL

Electronic Materials | June 2022 - Browse Articles
Electronic Materials | June 2022 - Browse Articles

Advanced Electronic Materials: Vol 6, No 1
Advanced Electronic Materials: Vol 6, No 1

J. Mater. Chem. C] Efficient Perovskite Nanocrystal Light-Emitting Diodes Using Benzimidazole-Substituted Anthracene Derivative as the Electron Transport Material – Nanomaterials Engineering Research Group | ETH Zurich
J. Mater. Chem. C] Efficient Perovskite Nanocrystal Light-Emitting Diodes Using Benzimidazole-Substituted Anthracene Derivative as the Electron Transport Material – Nanomaterials Engineering Research Group | ETH Zurich

A survey of ohmic contacts to III-V compound semiconductors
A survey of ohmic contacts to III-V compound semiconductors